Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond

被引：37

作者：

Lister, KA ^{[1
]}

Casey, BG

Dobson, PS

Thoms, S

Macintyre, DS

Wilkinson, CDW

Weaver, JMR

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Glasgow, Kelvin Nanotechnol Ltd, Glasgow G12 8LT, Lanark, Scotland

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

nanolithography; nanofabrication; diamond; reactive ion etching; hydrogen silsesquioxane (HSQ);

D O I：

10.1016/j.mee.2004.02.060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have made 23 nm period gratings (11.5 nm 1:1 lines and spaces) on diamond substrates using hydrogen silsesquioxane (HSQ) as a resist for electron beam lithography. Reactive ion etching (O-2 plasma) is used to transfer high resolution patterns to the diamond substrate with HSQ serving as a mask. We believe this to be the shortest period grating defined by electron beam lithography. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：319 / 322

页数：4

共 12 条

[1] Nanoscale embossing of polymers using a thermoplastic die [J].

Casey, BG ;

Cumming, DRS ;

Khandaker, II ;

Curtis, ASG ;

Wilkinson, CDW .

MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) :125-128

[2] IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS [J].

CHOU, SY ;

KRAUSS, PR ;

RENSTROM, PJ .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3114-3116

[3] Nanoimprint lithography [J].

Chou, SY ;

Krauss, PR ;

Renstrom, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4129-4133

[4] Arrays of nano-dots for cellular engineering [J].

Gadegaard, N ;

Thoms, S ;

Macintyre, DS ;

Mcghee, K ;

Gallagher, J ;

Casey, B ;

Wilkinson, CDW .

MICROELECTRONIC ENGINEERING, 2003, 67-8 :162-168

[5] High aspect pattern fabrication by nano imprint lithography using fine diamond mold [J].

Hirai, Y ;

Yoshida, S ;

Takagi, N ;

Tanaka, Y ;

Yabe, H ;

Sasaki, K ;

Sumitani, H ;

Yamamoto, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B) :3863-3866

[6] Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system [J].

Maile, BE ;

Henschel, W ;

Kurz, H ;

Rienks, B ;

Polman, R ;

Kaars, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (12B) :6836-6842

[7] Physical approximants to electron scattering [J].

Messina, G ;

Paoletti, A ;

Santangelo, S ;

Tucciarone, A .

MICROELECTRONIC ENGINEERING, 1997, 34 (02) :147-154

[8] Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations [J].

Namatsu, H ;

Yamaguchi, T ;

Nagase, M ;

Yamazaki, K ;

Kurihara, K .

MICROELECTRONIC ENGINEERING, 1998, 42 :331-334

[9] Thermal curing of hydrogen silsesquioxane [J].

Siew, YK ;

Sarkar, G ;

Hu, X ;

Hui, J ;

See, A ;

Chua, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (01) :335-339

[10] Surface treatment of diamond films with Ar and O2 cluster ion beams [J].

Toyoda, N ;

Hagiwara, N ;

Matsuo, J ;

Yamada, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :639-644

← 1 2 →