Capacitance-voltage characterization of GaAs-Al2O3 interfaces

被引：104

作者：

Brammertz, G. ^{[1
]}

Lin, H. -C. ^{[1
]}

Martens, K. ^{[1
]}

Mercier, D. ^{[1
]}

Sioncke, S. ^{[1
]}

Delabie, A. ^{[1
]}

Wang, W. E. ^{[1
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

Heyns, M. ^{[1
]}

机构：

[1] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

关键词：

aluminium compounds; energy gap; Fermi level; gallium arsenide; gallium compounds; III-V semiconductors; MIS devices;

D O I：

10.1063/1.3005172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors apply the conductance method at 25 and 150 degrees C to GaAs-Al2O3 metal-oxide-semiconductor devices in order to derive the interface state distribution (D-it) as a function of energy in the bandgap. The D-it is governed by two large interface state peaks at midgap energies, in agreement with the unified defect model. S-passivation and forming gas annealing reduce the D-it in large parts of the bandgap, mainly close to the valence band, reducing noticeably the room temperature frequency dispersion. However the midgap interface state peaks are not affected by these treatments, such that Fermi level pinning at midgap energies remains.

引用

页数：3

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