High ion density plasma etching of InGaP, AlInP, and AlGaP in CH4/H-2/Ar

被引：14

作者：

Lee, JW ^{[1
]}

Pearton, SJ ^{[1
]}

Santana, CJ ^{[1
]}

Mileham, JR ^{[1
]}

Lambers, ES ^{[1
]}

Abernathy, CR ^{[1
]}

Ren, F ^{[1
]}

Hobson, WS ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 03期

关键词：

D O I：

10.1149/1.1836589

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High microwave power (1000 W) electron cyclotron resonance CH4/H-2/Ar discharges produce etch rates for In0.5Ga0.5P, Al0.5In0.5P0.5, and Al0.5Ga0.5P of similar to 2000 Angstrom min(-1) at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH4-to-H-2 ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH4/H-2 is necessary in the achievement of acceptable morphologies.

引用

页码：1093 / 1098

页数：6

共 16 条

[1]

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