HYDROGENATION OF SI-DOPED AND BE-DOPED INGAP

被引：19

作者：

DALLESASSE, JM ^{[1
]}

SZAFRANEK, I ^{[1
]}

BAILLARGEON, JN ^{[1
]}

ELZEIN, N ^{[1
]}

HOLONYAK, N ^{[1
]}

STILLMAN, GE ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In1-xGaxP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.

引用

页码：5866 / 5870

页数：5

共 29 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].