HYDROGENATION-DEFINED STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P QUANTUM-WELL LASERS

被引：6

作者：

DALLESASSE, JM

ELZEIN, N

HOLONYAK, N

FLETCHER, RM

KUO, CP

OSENTOWSKI, TD

CRAFORD, MG

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] HEWLETT PACKARD CO,DIV OPTOELECTR,SAN JOSE,CA 95131

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

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页码：5871 / 5873

页数：3

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