High-power operation of hydrogenated AlyGa1-yAs-GaAs- InxGa1-xAs ten-stripe arrays operating at λ∼1.06 μm is described. Continuous (cw) operation of arrays with uncoated facets that are stabilized in temperature at 10°C has produced output powers as high as 375 mW/facet at 1.4 A. The optical coupling of the gain-guided arrays is shown to be significantly different from otherwise similar arrays fabricated in the AlyGa1-yAs-GaAs system. Limited "lifetesting" (168 h) of these strained layer diodes, stabilized at 50°C and a cw output power of 100 mW/facet (200 mW total), indicates good operating stability.