The effects of ZnGa2O4 formation on structural and optical properties of ZnO:Ga powders

被引：46

作者：

Goncalves, Agnaldo de Souza ^{[1
]}

de Lima, Sergio Antonio Marques ^{[1
]}

Davolos, Marian Rosaly ^{[1
]}

Antonio, Selma Gutierrez ^{[1
]}

Paiva-Santos, Carlos de Oliveira ^{[1
]}

机构：

[1] Univ Estadual Paulista, UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2006年 / 179卷 / 05期

基金：

巴西圣保罗研究基金会;

关键词：

zinc gallate; impurities in semiconductors; crystal structure and symmetry; optical properties; doping; ZnO : Ga; ZnGa3O4; Pechini method;

D O I：

10.1016/j.jssc.2006.01.046

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier Inc. All rights reserved.

引用

页码：1330 / 1334

页数：5

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