A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure

被引：19

作者：

Cho, T

Kim, JW

Oh, JE

Choe, JW

Hong, S

机构：

[1] Korea Adv Inst Sci & Technol, Dept EE, Optoelect Res Ctr, Taejon 305701, South Korea

[2] Hanyang Univ, Dept EE, Ctr Elect Mat & Components, Ansan, South Korea

[3] Kyung Hee Univ, Coll Nat Sci, Dept Phys, Suwon, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

self organized; InAs; quantum dot; infrared; photodetector;

D O I：

10.1143/JJAP.38.2442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at lambda = 10.5 mu m at T = 80 K. We also found that the device exhibits bias-dependent responsivity.

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收藏

页码：2442 / 2444

页数：3

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