Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas

被引：219

作者：

Yoshida, T

Takeyama, S

Yamada, Y

Mutoh, K

机构：

[1] Matsushita Research Institute Tokyo, Inc., Tama-ku, Kawasaki 214

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 13期

关键词：

D O I：

10.1063/1.116662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report nanometer-sized silicon (Si) crystallites prepared by excimer laser ablation in constant pressure inert gas ambient. Size distribution of the Si ultrafine particles depends on the pressure of inert gas ambients. The relation between the average size and the ambient pressure can be explained by an inertia fluid model. It is verified that the size of the Si ultrafine particles is similar to 3 nm and greater in diameter. Furthermore, crystallinity of the nanoscale ultrafine particles is crystalline similar to that of bulk Si. (C) 1996 American Institute of Physics.

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页码：1772 / 1774

页数：3

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