XPS study of InTe and GaTe single crystals oxidation

被引：61

作者：

Balitskii, OA

Jaegermann, W

机构：

[1] Lviv Ivan Franko Natl Univ, Dept Elect, UA-79005 Lvov, Ukraine

[2] TH Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2006年 / 97卷 / 01期

关键词：

X-ray photo-emission spectroscopy (XPS); oxidation; indium and gallium tellurides;

D O I：

10.1016/j.matchemphys.2005.07.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using X-ray photoelectron spectroscopy (XPS) thermal oxidation of indium and gallium tellurides single crystals was studied. It was established, that oxidation produces layers of both metal and tellurium oxides on the surface, which drastically differs from indium and gallium sulphides and selenides own oxides. Possibility of formation of the other tellurium containing phases is discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：98 / 101

页数：4

相关论文

共 10 条

[1] Characteristics of phase formation during indium selenides oxidation [J].

Balitskii, OA ;

Berchenko, NN ;

Savchyn, VP ;

Stakhira, JM .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (02) :130-135

[2] Thermal oxidation of indium and gallium sulphides [J].

Balitskii, OA ;

Savchyn, VP ;

Savchyn, PV .

PHYSICA B-CONDENSED MATTER, 2005, 355 (1-4) :365-369

[3] Surface characterization of In4Se3 single crystals [J].

Balitskii, OA ;

Savchyn, VP ;

Jaeckel, B ;

Jaegermann, W .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (04) :921-923

[4] Temperature dependence of reverse bias capacitance-voltage characteristics of Sn/p-GaTe Schottky diodes [J].

Coskun, C ;

Aydogan, S ;

Efeoglu, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (02) :242-246

[5] Chemical vapor deposition of hexagonal gallium selenide and telluride films from cubane precursors: Understanding the envelope of molecular control [J].

Gillan, EG ;

Barron, AR .

CHEMISTRY OF MATERIALS, 1997, 9 (12) :3037-3048

[6] InxTey semiconductor thin films obtained by co-evaporation [J].

Guettari, N ;

Amory, C ;

Morsli, M ;

Bernède, JC ;

Khelil, A .

THIN SOLID FILMS, 2003, 431 :497-501

[7] XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE [J].

IWAKURO, H ;

TATSUYAMA, C ;

ICHIMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :94-99

[8] Gallium telluride heterojunctions [J].

Katerinchuk, VN ;

Kovalyuk, MZ .

TECHNICAL PHYSICS LETTERS, 1999, 25 (01) :54-55

[9] XPS STUDY ON THE OXIDATION OF INSE [J].

MIYAKE, I ;

TANPO, T ;

TATSUYAMA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :172-178

[10]

Moulder J. F., 1995, HDB XRAY PHOTOELECTR