Thermal oxidation of indium and gallium sulphides

被引:19
作者
Balitskii, OA [1 ]
Savchyn, VP [1 ]
Savchyn, PV [1 ]
机构
[1] Lviv Iran Natl Univ, Dept Elect, UA-79005 Lvov, Ukraine
关键词
III-VI compound; InS; GaS; thermal oxidation;
D O I
10.1016/j.physb.2004.11.033
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The paper illustrates thermal oxidation of InS and GaS. Both thermodynamic calculations and experimental results suggest the formation of a monophase oxide layer. Such oxidation processes are not typical for the other compounds in the III-VI system, where the native oxide film is another chalcogen compound with a formula like (A(2)(III)Bv(3)(VI)) enriched. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:365 / 369
页数:5
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