InGaN/GaN multiple quantum wells grown on microfacets for white-light generation

被引：44

作者：

Cho, Chu-Young ^{[1
]}

Park, Il-Kyu ^{[1
]}

Kwon, Min-Ki ^{[1
]}

Kim, Ja-Yeon ^{[1
]}

Park, Seong-Ju ^{[1
]}

Jung, Dong-Ryul ^{[2
]}

Kwon, Kwang-Woo ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] NINEX Co Ltd, Pyongtaek 44912, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

关键词：

electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; quantum well devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors;

D O I：

10.1063/1.3049607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the white color electroluminescence (EL) emission from InGaN/GaN multiple quantum wells (MQWs) grown on GaN microfacets. The white color was realized by combining EL emission from InGaN/GaN MQWs on c-plane (0001), semipolar {11-22}, and {1-101} microfacets of trapezoidal n-GaN arrays. The color of EL emission was changed from reddish to bluish color with injection current and showed a white color in the current range of 180-230 mA. The variation in the color of EL emission was attributed to differences in current injection and quantum efficiency of MQWs grown on c-plane (0001) and semipolar GaN microfacets.

引用

页数：3

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