Islands and defects on the growing InAs(001)-(2 x 4) surface

被引：15

作者：

Bell, GR

Itoh, M

Jones, TS ^{[1
]}

Joyce, BA

Vvedensky, DD

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2AY, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

来源：

SURFACE SCIENCE | 1999年 / 433卷

关键词：

indium arsenide; models of surface kinetics; molecular beam epitaxy; scanning tunnelling microscopy; surface defects;

D O I：

10.1016/S0039-6028(99)00114-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunnelling microscopy (STM) and kinetic Monte Carlo (KMC) simulations have been used to study the nature of islands and defects during the initial stages of homoepitaxy on InAs(001)-(2 x 4). The density of defects (principally missing arsenic dimers) is found to be strongly temperature-dependent. The density and atomic configuration of the islands also vary as a function of temperature for fixed InAs coverage (0.1 ML). These effects are qualitatively explained using the KMC model, which shows that the arsenic kinetics are the most important factor behind the observed temperature dependence. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：455 / 459

页数：5

共 18 条

[1] Mechanism for disorder on GaAs(001)-(2x4) surfaces [J].