Island nucleation and growth on reconstructed GaAs(001) surfaces

被引：136

作者：

Itoh, M ^{[1
]}

Bell, GR

Avery, AR

Jones, TS

Joyce, BA

Vvedensky, DD

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.81.633

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The initial stages of homoepitaxy on GaAs(001) are studied with atomic-resolution scanning tunneling microscopy and Monte Carlo simulations that include the zinc blende structure of GaAs, the (2 x 4) reconstruction of the (001) surface, and the kinetics of As-2 incorporation. The reconstruction is found to favor nucleation on the top-layer arsenic dimers and to cause small islands to be unstable until they adopt the local (2 x 4) structure.

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页码：633 / 636

页数：4

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