Novel diffusion mechanism on the GaAs(001) surface: The role of adatom-dimer interaction

被引：155

作者：

Kley, A ^{[1
]}

Ruggerone, P ^{[1
]}

Scheffler, M ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Dahlem, Germany

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.79.5278

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Employing first principles total energy calculations we have studied the behavior of Ga and Al adatoms on the GaAs(001)-beta 2 surface. Beside the adsorption site we identify two diffusion channels that are characterized by different adatom-surface dimer interaction. Both affect the adatom migration: in one channel the adatom jumps across the surface dimers and leaves the dimer bonds intact; in the other one the dimer bonds are broken. The two channels are taken into account to derive effective adatom diffusion barriers. We find a strong diffusion anisotropy for both Al and Ga adatoms and, in agreement with experiments, higher diffusion barriers for Al than for Ga.

引用

页码：5278 / 5281

页数：4

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