Novel diffusion mechanism on the GaAs(001) surface: The role of adatom-dimer interaction

被引：155

作者：

Kley, A ^{[1
]}

Ruggerone, P ^{[1
]}

Scheffler, M ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Dahlem, Germany

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.79.5278

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Employing first principles total energy calculations we have studied the behavior of Ga and Al adatoms on the GaAs(001)-beta 2 surface. Beside the adsorption site we identify two diffusion channels that are characterized by different adatom-surface dimer interaction. Both affect the adatom migration: in one channel the adatom jumps across the surface dimers and leaves the dimer bonds intact; in the other one the dimer bonds are broken. The two channels are taken into account to derive effective adatom diffusion barriers. We find a strong diffusion anisotropy for both Al and Ga adatoms and, in agreement with experiments, higher diffusion barriers for Al than for Ga.

引用

页码：5278 / 5281

页数：4

共 30 条

[11] STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES [J].

KAPON, E ;

HWANG, DM ;

BHAT, R .

PHYSICAL REVIEW LETTERS, 1989, 63 (04) :430-433

[12] ANISOTROPIC LATERAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

SUGAYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1077-L1079

[13] Atomistic aspects of diffusion and growth on the Si and Ge (111) surfaces [J].

Kaxiras, E .

THIN SOLID FILMS, 1996, 272 (02) :386-398

[14]

KLEY A, UNPUB

[15] SURFACE-DIFFUSION PROCESSES IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS AND ALAS AS STUDIED ON GAAS (001)-(111)B FACET STRUCTURES [J].

KOSHIBA, S ;

NAKAMURA, Y ;

TSUCHIYA, M ;

NOGE, H ;

KANO, H ;

NAGAMUNE, Y ;

NODA, T ;

SAKAKI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) :4138-4144

[16] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[17] ADSORBATE-SUBSTRATE AND ADSORBATE-ADSORBATE INTERACTIONS OF NA AND K ADLAYERS ON AL(111) [J].

NEUGEBAUER, J ;

SCHEFFLER, M .

PHYSICAL REVIEW B, 1992, 46 (24) :16067-16080

[18] THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS [J].

NISHINAGA, T ;

CHO, KI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L12-L14

[19] STRUCTURE OF GAAS(001) SURFACES - THE ROLE OF ELECTROSTATIC INTERACTIONS [J].

NORTHRUP, JE ;

FROYEN, S .

PHYSICAL REVIEW B, 1994, 50 (03) :2015-2018

[20] ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001) [J].

OHTA, K ;

KOJIMA, T ;

NAKAGAWA, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :71-74

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