SURFACE-DIFFUSION LENGTH OBSERVED BY INSITU SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：43

作者：

HATA, M

WATANABE, A

ISU, T

机构：

[1] Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90951-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dependence of surface diffusion phenomena of Ga adatoms on As flux during molecular beam epitaxy is investigated. Variations of growth rates of GaAs layers grown on the (001) surfces adjacent to the (111) surfaces were measured by scanning microprobe reflection high-energy electron diffraction. The surface diffusion length is derived from the variations of the growth rates. It is found that the surface diffusion length of the Ga adatoms becomes larger under lower As flux.

引用

页码：83 / 87

页数：5

共 14 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
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[2] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
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