Structural, optical and electrical properties of ZnO and ZnO-Al2O3 films prepared by dc magnetron sputtering

被引：31

作者：

Meng, XQ ^{[1
]}

Zhen, W

Guo, JP

Fan, XJ

机构：

[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[2] Chinese Acad Sci, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 04期

关键词：

D O I：

10.1007/s003390051060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO and ZnO-Al2O3 thin films were prepared by de magnetron sputtering and their structural, optical and electrical properties were studied comparatively. It is discovered that the ZnO-Al2O3 thin films remain transparent in a shorter wavelength range than the ZnO films, resulting from the increase of their band gap. Their resistivity decreases by seven orders of magnitude, which is caused by doping of Al to ZnO grains in the film. Preferential orientation of ZnO grains in the ZnO-Al2O3 thin films deteriorates because of the existence of Al2O3 impurity phase in the film.

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收藏

页码：421 / 424

页数：4

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