CVD of ZrO2 using ZrI4 as metal precursor

被引：7

作者：

Forsgren, K ^{[1
]}

Hårsta, A ^{[1
]}

机构：

[1] Univ Uppsala, Dept Inorgan Chem, Angstrom Lab, S-75121 Uppsala, Sweden

来源：

JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期

关键词：

D O I：

10.1051/jp4:1999861

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new process for CVD of zirconium oxide is presented. With zirconium tetraiodide, ZrI4, and oxygen as starting materials, crystalline ZrO2 is deposited on Si(100) at lower temperatures than with the conventional halide processes. The films are smooth and well-adherent and show no trace of iodine. This work describes the basic features of the new process as well as the microstructural and electrical characteristics of the ZrO2 films.

引用

页码：487 / 491

页数：5

共 11 条

[1] CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET(2))(4) AS PRECURSOR [J].

BASTIANINI, A ;

BATTISTON, GA ;

GERBASI, R ;

PORCHIA, M ;

DAOLIO, S .

JOURNAL DE PHYSIQUE IV, 1995, 5 (C5) :525-531

[2]

DEHSU SB, 1990, MAT RES SOC S, V168, P349

[3]

FORSGREN K, IN PRESS THIN SOLID

[4]

GARVIE RC, 1970, HIGH TEMPERATURE O 2, P117

[5] DEPOSITION AND CHARACTERIZATION OF ZRO2 THIN-FILMS ON SILICON SUBSTRATE BY MOCVD [J].

HWANG, CS ;

KIM, HJ .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (06) :1361-1367

[6] DEPOSITION AND STRUCTURAL CHARACTERIZATION OF ZRO2 AND YTTRIA-STABILIZED ZRO2 FILMS BY CHEMICAL-VAPOR-DEPOSITION [J].

KIM, JS ;

MARZOUK, HA ;

REUCROFT, PJ .

THIN SOLID FILMS, 1995, 254 (1-2) :33-38

[7] THE CRYSTAL STRUCTURE OF BADDELEYITE (MONOCLINIC ZRO2) [J].

MCCULLOUGH, JD ;

TRUEBLOOD, KN .

ACTA CRYSTALLOGRAPHICA, 1959, 12 (07) :507-511

[8]

Schuisky M, 1998, CHEM VAPOR DEPOS, V4, P213, DOI 10.1002/(SICI)1521-3862(199812)04:06<213::AID-CVDE213>3.3.CO

[9]

2-Y

[10] PREPARATION AND PROPERTIES OF PYROLYTIC ZIRCONIUM DIOXIDE FILMS [J].

TAUBER, RN ;

DUMBRI, AC ;

CAFFREY, RE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :747-&

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