CVD of ZrO2 using ZrI4 as metal precursor

被引:7
作者
Forsgren, K [1 ]
Hårsta, A [1 ]
机构
[1] Univ Uppsala, Dept Inorgan Chem, Angstrom Lab, S-75121 Uppsala, Sweden
来源
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期
关键词
D O I
10.1051/jp4:1999861
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A new process for CVD of zirconium oxide is presented. With zirconium tetraiodide, ZrI4, and oxygen as starting materials, crystalline ZrO2 is deposited on Si(100) at lower temperatures than with the conventional halide processes. The films are smooth and well-adherent and show no trace of iodine. This work describes the basic features of the new process as well as the microstructural and electrical characteristics of the ZrO2 films.
引用
收藏
页码:487 / 491
页数:5
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