DEPOSITION AND CHARACTERIZATION OF ZRO2 THIN-FILMS ON SILICON SUBSTRATE BY MOCVD

被引：63

作者：

HWANG, CS

KIM, HJ

机构：

[1] Department of Inorganic Materials Engineering, Seoul National University, Seoul

来源：

JOURNAL OF MATERIALS RESEARCH | 1993年 / 8卷 / 06期

关键词：

D O I：

10.1557/JMR.1993.1361

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300-615-degrees-C. Above a deposition temperature of 400-degrees-C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350-degrees-C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

引用

页码：1361 / 1367

页数：7

共 23 条

[1] CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZRO2, HFO2) BY THERMAL-DECOMPOSITION OF ZIRCONIUM AND HAFNIUM BETA-DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN [J].