CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET(2))(4) AS PRECURSOR

By using tetrakis(diethylamido) zirconium [Zr(NEt(2))(4)]. excellent quality ZrO2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580 degrees C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550 degrees C the as-gown films resulted highly textured and mere dominated by the (020) orientation. The films mere annealed in the range 600-1000 degrees C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.