HOMOLEPTIC TIN AND SILICON AMIDO COMPOUNDS AS PRECURSORS FOR LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TIN AND SILICON-OXIDE THIN-FILMS

被引：16

作者：

ATAGI, LM

HOFFMAN, DM

LIU, JR

ZHENG, ZS

CHU, WK

RUBIANO, RR

SPRINGER, RW

SMITH, DC

机构：

[1] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204

[2] UNIV HOUSTON,TEXAS CTR SUPERCONDUCT,HOUSTON,TX 77204

[3] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

CHEMISTRY OF MATERIALS | 1994年 / 6卷 / 04期

关键词：

D O I：

10.1021/cm00040a005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Main-group amido complexes are reactive sources of the main-group elements in CVD processes. This is illustrated by reacting Sn(NMe2)4 and Si(NMe2)4 with oxygen in an atmospheric pressure chemical vapor deposition reactor to give nearly stoichiometric tin and silicon oxide films at low substrate temperatures.

引用

页码：360 / 361

页数：2

共 24 条

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