Comparison of InAs/GaAs quantum dot infrared photodetector and GaAs/(AlGa)As superlattice infrared photodetector

被引：31

作者：

Lin, SY ^{[1
]}

Tsai, YJ ^{[1
]}

Lee, SC ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 12A期

关键词：

quantum dot; superlattice; infrared photodetector;

D O I：

10.1143/JJAP.40.L1290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 10-stacked InAs/Ga As quantum dot infrared photodetector (QDIP) is compared with a 20-period GaAs/(AlGa) As superlattice infrared photodetector (SLIP). The 2-10 mum wide detection window and 187 mA/W high peak responsivity of InAs/GaAs QDIP at 7 mum at an applied voltage of 1.1 V are Superior to the 7-10 mum detection window and 140 mA/W responsivity of GaAs/(AlGa)As SLIP at 9.4 mum at an applied voltage of 1.3 V. The photocurrent of SLIP is temperature-independent, whereas the photocurrent of QDIP increases with increasing temperature from 20 to 100 K. The polarization-dependent response ratios of 0.22 and 0.39 are observed for SLIP and QDIP respectively.

引用

页码：L1290 / L1292

页数：3

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