High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

被引：60

作者：

Lin, SY ^{[1
]}

Tsai, YR ^{[1
]}

Lee, SC ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 18期

关键词：

D O I：

10.1063/1.1365950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ten-stacked InAs/GaAs quantum-dot infrared photodetectors with single Al0.3Ga0.7As blocking layers at either side of the stacked dots are investigated. With peak responsivity 214 mA/W and specific detectivity 1.17x10(10) cm Hz(1/2)/W at 6 mum, quantum-dot infrared photodetectors with single-sided blocking layers are superior in responsivity with compatible detectivity as compared to those without blocking layers. Enhancement of the photoelectron avalanche process and the absence of negative differential conductance are observed. The devices exhibit two different infrared absorption regions at 2-6 and 6-10 mum, which indicates a wide detection window of the device. (C) 2001 American Institute of Physics.

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页码：2784 / 2786

页数：3

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