Characteristics of InGaAs quantum dot infrared photodetectors

被引：163

作者：

Xu, SJ ^{[1
]}

Chua, SJ

Mei, T

Wang, XC

Zhang, XH

Karunasiri, G

Fan, WJ

Wang, CH

Jiang, J

Wang, S

Xie, XG

机构：

[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore

[3] MBE Technol Pte Ltd, Singapore 118206, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期

关键词：

D O I：

10.1063/1.122703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 mm was obtained for nonpolarized incident light on the detector with a 45 degrees angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. (C) 1998 American Institute of Physics. [S0003-6951(98)01547-2].

引用

页码：3153 / 3155

页数：3

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