Polarization dependence of intraband absorption in self-organized quantum dots

被引：24

作者：

Chua, SJ ^{[1
]}

Xu, SJ

Zhang, XH

Wang, XC

Mei, T

Fan, WJ

Wang, CH

Jiang, J

Xie, XG

机构：

[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Ctr Optoelect, Dept Elect Engn, Singapore 119260, Singapore

[3] MBE Technol Pte Ltd, Singapore 118206, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In0.35Ga0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. (C) 1998 American Institute of Physics. [S0003-6951(98)00740-2].

引用

页码：1997 / 1999

页数：3

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