A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector

被引：100

作者：

Pan, D ^{[1
]}

Towe, E

Kennerly, S

机构：

[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the optical and electrical properties of a five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector. A primary intersubband transition peak is observed at the wavelength of 10.2 mu m and a secondary one at 9.4 mu m. Excellent electron transport and peak detectivity of 7x10(9) cm Hz(1/2)/W are achieved at 30 K, with a low bias responsivity of up to 70 mA/W at 0.6 V. We believe that an observed avalanche gain process is initiated by intersubband absorption in the quantum dots. The maximum responsivity due to this avalanche multiplication process is about 4 A/W at a bias of 1.0 V. (C) 1999 American Institute of Physics. [S0003-6951(99)04644-6].

引用

页码：2719 / 2721

页数：3

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