n- and p-type modulation doping of Te related semimagnetic II-VI heterostructures

被引：20

作者：

Arnoult, A

Ferrand, D

Huard, V

Cibert, J ^{[1
]}

Grattepain, C

Saminadayar, K

Bourgognon, C

Wasiela, A

Tatarenko, S

机构：

[1] CEA, PSC, DRFMC, SP2M, F-38054 Grenoble 9, France

[2] CNRS, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

[3] Univ Grenoble 1, F-38402 St Martin Dheres, France

[4] CNRS, Phys Solides Bellevue Lab, F-92195 Meudon, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

modulation doping; interdiffusion; II-VI compounds;

D O I：

10.1016/S0022-0248(98)01445-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The study of the interdiffusion in CdTe-CdZnMgTe multiquantum wells p-type doped with nitrogen reveals that the intermixing leading to the destruction of the quantum wells occurs essentially between the Cd and Mg atoms, while the Zn atoms stay in their lattice sites. The interdiffusion is related to high density of N atoms. The n-type doping of (0 0 1) CdTe with aluminium impurities has been successfully achieved leading to very high doping levels (1.1 x 10(19) cm(-3)). The presence of a 2D electron gas in a CdMnTe/CdZnMgTe heterostructure modulation-doped with Al in the barrier has been demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：715 / 718

页数：4

共 16 条

[1]

Arnoult A, 1998, J CRYST GROWTH, V184, P445

[2] Channels of Cd diffusion and stoichiometry in CdTe grown by molecular beam epitaxy [J].