IODINE DOPING OF CDTE AND CDZNTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

BRUNLECUNFF, D

BARON, T

DAUDIN, B

TATARENKO, S

BLANCHARD, B

机构：

[1] CEA, Département de Recherche Fondamentale sur la Matière Condensée, SPMM/LPI

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The successful n-type doping of CdTe and CdZnTe alloys by using iodine as a dopant is reported. For CdTe, doping levels as high as 6.2 X 10(18) cm(-3) can be obtained with carrier mobility around 500 cm(2) V-1 s(-1) at room temperature. An ionization energy of 14.8 meV has been determined for the shallow donor by Hall effect measurements. In the case of Cd1-xZnxTe ternary alloys, only a slight decrease in the carrier density is observed when increasing the Zn concentration, by contrast to doping with indium. The doping level of 5 x 10(17) cm(-3) can be achieved for a Zn concentration x as high as 0.25, demonstrating the higher efficiency of iodine doping as compared to indium doping. (C) 1995 American Institute of Physics.

引用

页码：965 / 967

页数：3

共 14 条

[1] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].