Growth mechanism of planar-type GaAs nanowhiskers

被引：11

作者：

Haraguchi, K

Hiruma, K

Hosomi, K

Shirai, M

Katsuyama, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 05期

关键词：

D O I：

10.1116/1.589355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanism for the lateral growth of ultrathin GaAs whiskers is discussed in connection with the vapor-liquid-solid growth model. The observed growth rate shows that the migration of the source material plays an essential role in such whisker growth. (C) 1997 American Vacuum Society. [S0734-211X(97)02705-4].

引用

收藏

页码：1685 / 1687

页数：3

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