Self-organized fabrication of planar GaAs nanowhisker arrays

GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices. (C) 1996 American Institute of Physics.