Reliability of vertical-cavity lasers at Hewlett Packard

被引：4

作者：

Herrick, RW ^{[1
]}

Lei, C ^{[1
]}

Keever, MR ^{[1
]}

Lim, SF ^{[1
]}

Deng, H ^{[1
]}

Dudley, JJ ^{[1
]}

Bhagat, JK ^{[1
]}

机构：

[1] Hewlett Packard Corp, Fiber Opt Components Div, San Jose, CA 95131 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS III | 1999年 / 3627卷

关键词：

VCSEL; reliability; degradation; semiconductor laser; laser aging;

D O I：

10.1117/12.347106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical-Cavity Surface-Emitting Lasers (VCSELs) have rapidly been adopted for use in data communications modules due largely to the improvement in reliability over that of competing compact disc (CD) lasers. While very long mean lifetimes for VCSELs have been published elsewhere (>5x10(6) h MTTF at 40C)[1,2], telecommunications switching applications require further reduction in the early failure rate to meet targets of <0.5% failures over 25 years at 50-70C. Therefore, an extensive reliability program is needed to measure both the wear-out lifetime and the random failure rate of the devices. The results of accelerated life tests will be presented, and we will discuss the methodology used to estimate the failure rate. Models of current and thermal acceleration will be presented. Degradation mechanisms observed in HP lasers will be briefly discussed. We also present preliminary results from HP oxide-aperture VCSELs.

引用

页码：48 / 55

页数：8

共 16 条

[1] Characteristics of VCSELs and VCSEL arrays for optical data links [J].

Gaw, CA ;

Jiang, WB ;

Lebby, M ;

Kiely, PA ;

Claisse, PR .

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS II, 1997, 3004 :122-133

[2] Reliability of proton-implanted VCSELs for data communications [J].

Guenter, JK ;

Hawthorne, RA ;

Granville, DN ;

HibbsBrenner, MK ;

Morgan, RA .

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS, 1996, 2683 :102-113

[3]

HAWTHORNE RA, 1998, OPTOELECTRONICS RELI

[4]

HAWTHORNE RA, 1996, 34 ANN P INT REL PHY, P203

[5] Analysis of VCSEL degradation modes [J].

Herrick, RW ;

Cheng, YM ;

Beck, JM ;

Petroff, PM ;

Scott, JW ;

Peters, MG ;

Robinson, GD ;

Coldren, LA ;

Morgan, RA ;

HibbsBrenner, MK .

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS, 1996, 2683 :123-133

[6] Gradual degradation in 850-nm vertical-cavity surface-emitting lasers [J].

Herrick, RW ;

Petroff, PM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (10) :1963-1969

[7]

HERRICK RW, PHOTON TECHNOL LETT, V7, P1107

[8]

HERRICK W, 1997, THESIS U CALIFORNIA

[9]

JENSEN F, 1995, ELECT COMPONENT RELI, P218

[10] High performance vertical-cavity surface emitting lasers for product applications [J].

Lei, C ;

Hodge, LA ;

Dudley, JJ ;

Keever, MR ;

Liang, B ;

Bhagat, JR ;

Liao, A .

VERTICAL-CAVITY SURFACE-EMITTING LASERS, 1997, 303 :28-33

← 1 2 →