Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8

被引：23

作者：

Vaju, C. ^{[1
]}

Cario, L. ^{[1
]}

Corraze, B. ^{[1
]}

Janod, E. ^{[1
]}

Dubost, V. ^{[2
]}

Cren, T. ^{[2
]}

Roditchev, D. ^{[2
]}

Braithwaite, D. ^{[3
]}

Chauvet, O. ^{[1
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

[2] Univ Paris 06, CNRS, INSP, UMR 75 88, F-75015 Paris, France

[3] CEA Grenoble, SPSMS, INAC, F-38054 Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期

关键词：

Resistive switching; Superconductivity; Chalcogenide; Mott insulator;

D O I：

10.1016/j.mee.2008.09.026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is accumulated evidence today that an electric pulse can drastically modify the physical properties of correlated materials. An electric pulse was shown for example to induce an insulator-to-metal transition in manganites or in organic Mott insulators. We report here the first experimental evidence of a nonvolatile electric pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. This resistive switching is concomitant to an electronic phase separation induced by the pulse. This phenomena most probably differs from the thermal, electronic injection or ionic diffusion processes explaining the resistive switching in materials foreseen for non-volatile memory (RRAM) applications. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2430 / 2433

页数：4

共 25 条

[1] Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure -: art. no. 126403 [J].

Abd-Elmeguid, MM ;

Ni, B ;

Khomskii, DI ;

Pocha, R ;

Johrendt, D ;

Wang, X ;

Syassen, K .

PHYSICAL REVIEW LETTERS, 2004, 93 (12) :126403-1

[2] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[3] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[4] POSSIBLE HIGH-TC SUPERCONDUCTIVITY IN THE BA-LA-CU-O SYSTEM [J].

BEDNORZ, JG ;

MULLER, KA .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 64 (02) :189-193

[5]

BENYAICH H, 1984, J SOLID STATE CHEM, V51, P212

[6] Dielectric breakdown and current switching effect in the incommensurate layered compound (LaS)1.196VS2 [J].

Cario, L ;

Corraze, B ;

Meerschaut, A ;

Chauvet, O .

PHYSICAL REVIEW B, 2006, 73 (15)

[7] Determination of the modulated structure of the misfit layer compound (LaS)1.196VS2 [J].

Cario, L ;

Meerschaut, A ;

Corraze, B ;

Chauvet, O .

MATERIALS RESEARCH BULLETIN, 2005, 40 (01) :125-133

[8] Coulomb effects in granular materials at not very low temperatures [J].

Efetov, KB ;

Tschersich, A .

PHYSICAL REVIEW B, 2003, 67 (17)

[9] Insulator-superconductor transition in 3D granular Al-Ge films [J].

Gerber, A ;

Milner, A ;

Deutscher, G ;

Karpovsky, M ;

Gladkikh, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4277-4280

[10] Metal-insulator transitions [J].

Imada, M ;

Fujimori, A ;

Tokura, Y .

REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263

← 1 2 3 →