Progress and prospect of group-III nitride semiconductors

被引：34

作者：

Akasaki, I

Amano, H

机构：

[1] Dept. of Elec. and Electron. Eng., Meijo University, 1-501 Shiogama-guchi, Tempaku-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

基金：

日本学术振兴会;

关键词：

group-III nitrides; OMVPE; MBE; low-temperature buffer; conductivity control; LEDs; lasers;

D O I：

10.1016/S0022-0248(96)00946-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Recent progress of crystal growth, conductivity control of group-III nitrides, has enabled us to produce high-performance short wavelength light-emitting diodes. Room temperature operation of nitride-based laser diodes has also been realized. Still, much further advances are required in many areas of materials science and device fabrication of the nitrides.

引用

页码：29 / 36

页数：8

共 40 条

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