Performance of SI LEC GaAs detectors at 20 degrees C and -30 degrees C for X- and gamma-ray spectroscopy

被引:17
作者
Bertuccio, G
Alietti, M
Canali, C
Cetronio, A
Chiossi, C
Nava, F
机构
[1] DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[2] POLITECN MILAN,DIPARTIMENTO ELETTR & INFORMAT,I-20133 MILAN,ITALY
[3] DIPARTIMENTO SCI INGN,I-41100 MODENA,ITALY
[4] ALENIA SPA,I-00131 ROME,ITALY
[5] IST NAZL FIS NUCL,SEZ MILANO,I-20133 MILAN,ITALY
[6] IST NAZL FIS NUCL,SEZ BOLOGNA,I-40126 BOLOGNA,ITALY
关键词
D O I
10.1016/0168-9002(96)00526-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report on the performance and limitations of a 7 mm(2), 100 mu m thick SI LEC GaAs detector, operated in overdepleted conditions with applied bias of 400 V at 20 degrees C and -30 degrees C, In detecting X- and gamma-rays. At 20 degrees C performance is limited to a charge collection efficiency of 92% and to an energy resolution of about 16.5 keV FWHM on the 59.5 keV line of Am-241. At -30 degrees C the charge collection efficiency is 85% and a resolution in between 1.8 and 2.2 keV FWHM in the photon energy range 8-60 keV has been achieved. The latest data represent to bur knowledge the best ones yet reported for GaAs LEC detectors.
引用
收藏
页码:152 / 154
页数:3
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