ROOM-TEMPERATURE GAAS GAMMA-DETECTORS

被引：23

作者：

HESSE, K

HOPPNER, D

GRAMANN, W

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1972年 / 101卷 / 01期

关键词：

D O I：

10.1016/0029-554X(72)90752-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：39 / &

共 9 条

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[3]

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[4]

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NUCLEAR INSTRUMENTS & METHODS, 1966, 44 (01) :145-+

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J].

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WEINSTEIN, M .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2885-&

[7] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].

SCHIBLI, E ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+

[8] THEORETICAL EXPRESSION FOR IMPEDANCE OF REVERSE-BIASED P-N JUNCTIONS WITH DEEP TRAPS [J].

SCHULTZ, W .

SOLID-STATE ELECTRONICS, 1971, 14 (03) :227-+

[9]

ZANIO K, 1970, IEEE T, VNS17, P287

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