Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

被引：704

作者：

Jeong, Jae Kyeong ^{[1
]}

Yang, Hui Won ^{[1
]}

Jeong, Jong Han ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

机构：

[1] Samsung SDI Co LTD, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2990657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (V-th) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress. (C) 2008 American Institute of Physics.

引用

页数：3

共 22 条

[1] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[2] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[3] BIAS STRESS-INDUCED INSTABILITIES IN AMORPHOUS-SILICON NITRIDE HYDROGENATED AMORPHOUS-SILICON STRUCTURES - IS THE CARRIER-INDUCED DEFECT CREATION MODEL CORRECT [J].

GELATOS, AV ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1990, 57 (12) :1197-1199

[4] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[5] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

HEPBURN, AR ;

MARSHALL, JM ;

MAIN, C ;

POWELL, MJ ;

VANBERKEL, C .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2215-2218

[6] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J].

Jeong, Jae Kyeong ;

Jeong, Jong Han ;

Yang, Hui Won ;

Park, Jin-Seong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[7] Flexible full-color AMOLED on ultrathin metal foil [J].

Jeong, Jae Kyeong ;

Jin, Dong Un ;

Shin, Hyun Soo ;

Lee, Hun Jung ;

Kim, Minkyu ;

Ahn, Tae Kyung ;

Lee, Jaeseob ;

Mo, Yeon Gon ;

Chung, Ho Kyun .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) :389-391

[8] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[9] Stable ZnO thin film transistors by fast open air atomic layer deposition [J].

Levy, David H. ;

Freeman, Diane ;

Nelson, Shelby F. ;

Cowdery-Corvan, Peter J. ;

Irving, Lyn M. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[10] Electronic transport through individual ZnO nanowires [J].

Li, QH ;

Wan, Q ;

Liang, YX ;

Wang, TH .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4556-4558

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