Stability of transparent zinc tin oxide transistors under bias stress

被引：200

作者：

Goerrn, P. ^{[1
]}

Hoelzer, P.

Riedl, T.

Kowalsky, W.

Wang, J.

Weimann, T.

Hinze, P.

Kipp, S.

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Phys & Theoret Chem, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2458457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shifts in the threshold voltage (Delta V-th) of transparent zinc tin oxide (ZTO) transistors under gate bias stress are studied. The effect of composition and processing temperature on the device stability has been investigated. Based on the research, highly stable transistors with Delta V-th as small as 30 mV after 1000 min of operation have been fabricated with a composition of [Zn]:[Sn]=36:64. As current drivers in active matrix displays their stability renders ZTO thin film transistors (TFTs) a very attractive alternative to TFTs based on established technologies. (c) 2007 American Institute of Physics.

引用

页数：3

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