Stable polycrystalline silicon TFT with MICC

被引：27

作者：

Kim, JC ^{[1
]}

Choi, JH ^{[1
]}

Kim, SS ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期

关键词：

bias-stress effect; cap layer; metal-induced crystallization; poly-Si thin-film transistor (TFT);

D O I：

10.1109/LED.2004.824844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the bias-induced changes in the performance of the poly-Si thin-film transistor (TFT) by metal-induced crystallization of amorphous silicon through a cap layer (MICC) poly-Si. The p-channel poly-Si TFT exhibited a field-effect mobility of 101 cm(2)/V (.) s and a minimum leakage current of < 1.0 x 10(-12) A/mum at V-ds = -10 V. The MICC poly-Si TFT performance changes little by either gate or hot-carrier bias stress. The better stability appears to be due to the smooth surface of MICC poly-Si, which is similar to2 mn that is much smaller than that (13 nm) of a laser-annealed poly-Si.

引用

页码：182 / 184

页数：3

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