Stability of transparent zinc tin oxide transistors under bias stress

被引：200

作者：

Goerrn, P. ^{[1
]}

Hoelzer, P.

Riedl, T.

Kowalsky, W.

Wang, J.

Weimann, T.

Hinze, P.

Kipp, S.

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Phys & Theoret Chem, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2458457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shifts in the threshold voltage (Delta V-th) of transparent zinc tin oxide (ZTO) transistors under gate bias stress are studied. The effect of composition and processing temperature on the device stability has been investigated. Based on the research, highly stable transistors with Delta V-th as small as 30 mV after 1000 min of operation have been fabricated with a composition of [Zn]:[Sn]=36:64. As current drivers in active matrix displays their stability renders ZTO thin film transistors (TFTs) a very attractive alternative to TFTs based on established technologies. (c) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[11]

KOWALSKY W, IN PRESS P SPIE

[12] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[13] BIAS DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

VANBERKEL, C ;

FRENCH, ID ;

NICHOLLS, DH .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1242-1244

[14] TIME AND TEMPERATURE-DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

VANBERKEL, C ;

HUGHES, JR .

APPLIED PHYSICS LETTERS, 1989, 54 (14) :1323-1325

[15] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J].

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :597-599

[16] STATE CREATION AND HOLE TRAPPING IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AT HIGH DRAIN BIAS [J].

YOUNG, ND ;

GILL, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) :728-732

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