Mechanisms of CVD diamond nucleation and growth on mechanically scratched and virgin Si(100) surfaces

被引:16
作者
Demuynck, L
Arnault, JC
Speisser, C
Polini, R
LeNormand, F
机构
[1] INST PHYS & CHIM MAT STRASBOURG,GRP SURFACES INTERFACES,F-67037 STRASBOURG,FRANCE
[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO SCI & TECHNOL CHIM,I-00133 ROME,ITALY
关键词
diamond nucleation; electron spectroscopies; silicon; silicon carbide; PHASE;
D O I
10.1016/S0925-9635(96)00709-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The diamond nucleation and growth processes on a scratched and a virgin Si(100) surface were studied by both electron spectroscopies (XPS) and microstructural probes (SEM, TEM) in order to connect the nature of surface species with the structural changes. We have shown that a preliminary scratching of the substrate surface hugely enhances the nucleation kinetics relative to the virgin sample. This is explained by the much faster formation of stable diamond nuclei in correspondence of suitable nucleation sites. The results have been modeled, considering the covered surface S as the unique parameter. S obeys an Avrami plot of the form S= 1 - exp (-kt(n)) where the exponent n approximate to 2.5 +/- 0.4 over a wide range of deposition is indicative of a constant linear growth rate with decreasing nucleation rate. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:235 / 239
页数:5
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