Photoluminescence of manufactured 1-D crystalline Si gratings

An innovative fabrication process for forming I-D, nanoscale linewidth grating and wire structures in (100) Si is reported. Scanning electron microscope and Raman scattering measurements demonstrate crystalline structures with widths as small as similar to 1.5 nm. For structures less than or similar to 10 nm, room temperature photoluminescence measurements (257 nm excitation) show spectral peaks similar to 380-500 nm. In contrast to the Raman scattering results, which show a definite correlation with structure widths, the PL spectra are relatively invariant as structure widths are reduced below 10 nm.