High reliability GaN-based light-emitting diodes with photo-enhanced wet etching

被引：29

作者：

Chen, LC ^{[1
]}

Huang, YL ^{[1
]}

机构：

[1] Natl Taiwan Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 07期

关键词：

GaN; light-emitting diode; photo-enhanced wet etching; reliability;

D O I：

10.1016/j.sse.2004.02.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study concerns the generation of GaN-based light-emitting diodes (LEDs), whose n-GaN surfaces were processed using photo-enhanced chemical etching (PEC) by illumination using an unfiltered Hg arc lamp. Etching rates of 29.8 A/min were obtained using KOH solution at a volume concentration of 45% and an illumination intensity of 50 mW/cm(2). The GaN light-emitting diodes with PEC process using KOH solution for 10 min, exhibit reverse currents of 4.83 x 10(-10) and 4.06 x 10(-8) A at reverse biases of 5 and 10 V, respectively. The GaN-based LEDs have an ideality factor n of 1.17 at a forward bias of 1.1 V. The degradation rate of the output power of light did not exceed 0.3% after burning-in for 500 h in a reliability test at 50 mA and room temperature. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1239 / 1242

页数：4

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