Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

被引：46

作者：

Jiang, H

Nakata, N

Zhao, GY

Ishikawa, H

Shao, CL

Egawa, T

Jimbo, T

Umeno, M

机构：

[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 5B期

关键词：

GaN; MSM-PD; dark current; responsivity; internal gain;

D O I：

10.1143/JJAP.40.L505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 mum exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 muW/cm(2) irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

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收藏

页码：L505 / L507

页数：3

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