Low-intensity ultraviolet photodetectors based on AlGaN

被引：47

作者：

Pernot, C

Hirano, A

Iwaya, M

Detchprohm, T

Amano, H

Akasaki, I

机构：

[1] Osaka Gas Co Ltd, Dept Res & Dev, Shimogyo Ku, Kyoto 600, Japan

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 5A期

关键词：

AlGaN; photodetector; threading dislocation; persistent photoconductivity; flame detector;

D O I：

10.1143/JJAP.38.L487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and the characterization of low-intensity ultraviolet (UV) photodetectors based on AlxGa1-xN frown by organometallic vapor phase epitaxy, with threading dislocation density in the range of 5-8 x 10(9) to 2 x 10(11) cm(-2) and 6-7 x 10(7) to 1 x 10(9) cm(-2). The detectors present dark current values below 100 fA at 10 V bias allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm(2). The photodetectors fabricated on low-density dislocation layers present a greatly reduced persistent photoconductivity. Also, they achieved a rejection ratio of 3 orders of magnitude between UV and visible light with cutoffs at 365 and 270 nm for x = 0 and x = 0.43, respectively.

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页码：L487 / L489

页数：3

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