Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I

被引:3
作者
Chen, G [1 ]
Boyd, ID [1 ]
机构
[1] Cornell Univ, Sibley Sch Mech & Aerosp Engn, Ithaca, NY 14853 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 03期
关键词
D O I
10.1116/1.581672
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The scale-up of a new silicon thin film deposition technique employing supersonic molecular beams is investigated, Small area silicon thin film deposition was proven successful previously, This study aims to investigate the possibility of a larger scale deposition using axisymmetric ring sources through the numerical approach. It is found that the use of axisymmetric ring nozzle sources can significantly increase the deposition area and improve the film uniformity. The simulations show a uniform silicon growth over an area 18 cm in diameter at similar to 155 A/min. The geometrical effects of the ring nozzle sources and the substrate to nozzle distance are studied. The influence of the source How rate and pumping capacity is also examined. (C) 1999 American Vacuum Society. [S0734-2101(99)00403-0].
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页码:970 / 977
页数:8
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