Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

被引：9

作者：

Kim, S

Ju, BK

Lee, YH

Park, BS

Baik, YJ

Lim, S

Oh, MH

机构：

[1] KOREA ADV INST SCI & TECHNOL,DIV CERAM,SEOUL,SOUTH KOREA

[2] DANKOOK UNIV,DEPT ELECT ENGN,CHEONAN,SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.589608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Angstrom. The maximum current density of 800 mu A/cm(2) and the threshold voltage of 600 V were obtained from the diamond-tip held emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip held emitter array was not varied over a wide range of vacuum pressure relatively to the hat diamond film. (C) 1997 American Vacuum Society.

引用

页码：499 / 502

页数：4

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