Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate

被引：46

作者：

Zou, J ^{[1
]}

Liao, XZ

Cockayne, DJH

Leon, R

机构：

[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.59.12279

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A transmission electron microscopy (TEM) investigation of the morphology of InxGa1-xAs quantum dots grown on a GaAs(001) substrate has been carried out. The size and the shape of the quantum dots have been determined using bright-field images of cross-section TEM specimens and [001] on-zone bright-field images with imaging simulation from plan-view TEM specimens. The results suggest that the coherent quantum dots are lens shaped with base diameters of 25-40 nm and aspect ratios of height to diameter of 1:6-1:4. [S0163-1829(99)00920-0].

引用

页码：12279 / 12282

页数：4

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