Diblock copolymer directed self-assembly for CMOS device fabrication

被引：4

作者：

Chang, Li-Wen ^{[1
,3
]}

Wong, H. S. Philip ^{[1
,2
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

DESIGN AND PROCESS INTEGRATION FOR MICROELECTRONIC MANUFACTURING IV | 2006年 / 6156卷

关键词：

self-assembly; diblock copolymer; CMOS fabrication;

D O I：

10.1117/12.661028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead of using self-assembly to assemble the entire device, we plan to utilize self-assembly to perform one critical step of the complex MOSFET process flow in the beginning. Initial results of using PS-b-PMMA to define pores with hexagonal array having diameter of 20 nm for contact hole patterning will be described. Potential integration issues for making MOSFETs will also be addressed.

引用

页数：6

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