Nanoscale patterning using self-assembled polymers for semiconductor applications

被引:153
作者
Guarini, KW [1 ]
Black, CT [1 ]
Milkove, KR [1 ]
Sandstrom, RL [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1421551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of self-organizing diblock copolymers may be suitable for semiconductor applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale areas. We investigate the process window for forming ordered arrays of nanoscale polymer domains in thin films across 8-in.-diam silicon wafers, including the effect of substrate material and surface treatment, annealing conditions, copolymer molecular weight, and film thickness. We also demonstrate pattern transfer of the nanoporous polymer template using both reactive ion etching and metal lift off. (C) 2001 American Vacuum Society.
引用
收藏
页码:2784 / 2788
页数:5
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